Low Temperature CVD Grown Graphene for Highly Selective Gas Sensors Working under Ambient Conditions

Low Temperature CVD Grown Graphene for Highly Selective Gas Sensors Working under Ambient Conditions

In this paper we report on gas sensors based on graphene grown by Chemical Vapor Deposition at 850 °C. Mo was used as catalyst for graphene nucleation. Resistors were directly designed on pre-patterned Mo using the transfer-free process we recently developed, thus avoiding films damage during the transfer to the target substrate. Devices operating at room temperature and relative humidity set a...

Delft University of Technology Low Temperature CVD Grown Graphene for Highly Selective Gas Sensors Working under Ambient Conditions

In this paper we report on gas sensors based on graphene grown by Chemical Vapor Deposition at 850 °C. Mo was used as catalyst for graphene nucleation. Resistors were directly designed on pre-patterned Mo using the transfer-free process we recently developed, thus avoiding films damage during the transfer to the target substrate. Devices operating at room temperature and relative humidity set a...

Low Temperature Plasma CVD Grown Graphene by Microwave Surface-Wave Plasma CVD Using Camphor Precursor

Hydrocarbon precursor such as methane has been widely used to grow graphene films and the methods of growing quality graphene films are dominated by thermal CVD (chemical vapor deposition) system. Graphene films grown by plasma process are generally highly defective which in turns degrade the quality of the films. Here, using a green precursor, camphor we demonstrate a simple and economical met...

Selective Oxidation of Glycerol by Highly Active Bimetallic Catalysts at Ambient Temperature under Base-Free Conditions**

Reduced graphene oxide for room-temperature gas sensors.

We demonstrated high-performance gas sensors based on graphene oxide (GO) sheets partially reduced via low-temperature thermal treatments. Hydrophilic graphene oxide sheets uniformly suspended in water were first dispersed onto gold interdigitated electrodes. The partial reduction of the GO sheets was then achieved through low-temperature, multi-step annealing (100, 200, and 300 degrees C) or o...